SemiconductorMedium
Question
In a semiconductor p-n diode, the doping concentrations on p -side and n -side are $10^{15}$ atoms/ ${cm}^{3}$ and $10^{18}$ atoms $/{cm}^{3}$, respectively. Which one of the following statement is true?
Options
A.Widths of depletion region on either side of the interface are equal
B.The depletion region width is more on p-side compared to that in n -side
C.The depletion region width is more on $n$-side compared to that in p -side
D.No depletion region forms because of unequal doping concentrations on p and n-sides
Solution
Sol. [Key Concept: Charge neutrality $N_{p}x_{p} = N_{n}x_{n}$; the lightly-doped p-side ($10^{15}$) has the wider depletion region.]
$$N_{P}X_{P} = N_{n}X_{n} $$$N_{P} < N_{n}\therefore x_{P} > x_{n}$ in depletion region
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