SemiconductorHard
Question
Mobilities of electrons and holes in a sample of intrinsic Ge at room temperature are 0.35m2 /V-s and 0.18m2 /V-s respectively. If the electron and hole densities are each equal to 2.5 × 1019 / m3, the Ge conductivity will be
Options
A.3.12 S/m
B.2.12 S/m
C.1.12 S/m
D.4.12 S/m
Solution
Conductivity of Ge
σ = e(neμe + nhμh)
Here ne = nh = 25 × 1019 / m3
e = 1.6 × 10-19 C
μe = 0.35m2/V - s, μh = 0.18m2 /V - s
∴ σ = 1.6 × 10-19
(205 × 1019 × 0.35 + 2.5 × 1019 × 0.18)
= 1.6 × 10-19 × 2.5 × 1019 × 0.53
= 2.12 S/m
σ = e(neμe + nhμh)
Here ne = nh = 25 × 1019 / m3
e = 1.6 × 10-19 C
μe = 0.35m2/V - s, μh = 0.18m2 /V - s
∴ σ = 1.6 × 10-19
(205 × 1019 × 0.35 + 2.5 × 1019 × 0.18)
= 1.6 × 10-19 × 2.5 × 1019 × 0.53
= 2.12 S/m
Create a free account to view solution
View Solution FreeMore Semiconductor Questions
When the conductivity of a semiconductor is only due to breaking of covalent bonds, the semiconductor is called : -...on increasing the temperature of semiconductor, its resistance :-...Output is LOW if and only if all the inputs are HIGH′ Indicate the logic gate for which the above statement in tur...In a n-type semiconductor, which of the following statement is true:...In the following figure, the diodes which are forwards biased, are (A) (B) (C) (D)...