SemiconductorMedium
Question
In forward biasing of the p-n junction
Options
A.the positive terminal of the battery is connected to p-side and depletion region becomes thick
B. the positive terminal of the battery is connected to n-side and depletion region becomes thin
C.the positive terminal of the battery is connected to n-side and depletion region becomes thick
D.the positive terminal of the battery is connected to p-side and depletion region becomes thin
Solution
In forward biasing, the positive terminal of the battery is connected to p-side and the negative terminal to n-side of p-n junction. The forward bias voltage opposes the potential barrier. Due to it, the deplection region becomes thin.
Create a free account to view solution
View Solution FreeMore Semiconductor Questions
Diffusion current in a p-n junction is greater than the drift current in magnitude :-...In pure semiconductor Ge when we add the impurity of arsenic then we get a : -...A two Volts battery forward biases a diode however there is a drop of 0.5 V across the diode which is independent of cur...Forbidden energy gap of Ge is 0.75 ev, maximum wave length of incident radiation of photon for producing electron - hole...In the half wave rectifer circuit operating from 50Hz mains frequency, the fundamental frequency in the ripple would be...