SemiconductorEasy
Question
Pure Si at 500 K has equal number of electron (ne)and hole (nh) concentration of 1.5 × 1016 m-3. Doping by indium increases nh to 4.5 × 1022 m-3. The doped semiconductor is of
Options
A.p-type having electron concentration ne = 5 × 109 m-3
B.p-type having electron concentration ne = 5 × 1022 m-3
C.p-type having electron concentration ne = 2.5 × 1010 m-3
D.p-type having electron concentration ne = 2.5 × 1022 m-3
Solution
p-type semiconductor obtained when Si or Ge is doped with a trivalent impurity likealuminium (Al), boron (B), indium (In) etc,
Here, ni = 1.5 × 1016 m-3
nh = 4.5 × 1022 m-3 As nenh = ni2
ne =
= 5 × 109 m-3
Here, ni = 1.5 × 1016 m-3
nh = 4.5 × 1022 m-3 As nenh = ni2
ne =
= 5 × 109 m-3 Create a free account to view solution
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